參數(shù)資料
型號(hào): HB52RF649DC
廠商: Elpida Memory, Inc.
英文描述: 512MB Unbuffered SDRAM S.O.DIMM
中文描述: 512MB的無(wú)緩沖內(nèi)存的SODIMM
文件頁(yè)數(shù): 12/16頁(yè)
文件大?。?/td> 464K
代理商: HB52RF649DC
HB52RF649DC-B, HB52RD649DC-B
Data Sheet E0223H30 (Ver. 3.0)
12
Relationship Between Frequency and Minimum Latency
Parameter
-75
-A6
Frequency (MHz)
133
100
t
CK
(ns)
Active command to column command
(same bank)
Active command to active command
(same bank)
Active command to precharge command (same
bank)
Precharge command to active command (same
bank)
Write recovery or data-in to precharge command
(same bank)
Active command to active command
(different bank)
Self refresh exit time
Last data in to active command
(Auto precharge, same bank)
Symbol
PC100
Symbol
7.5
10
Notes
lRCD
3
2
1
lRC
9
7
= [lRAS+ lRP]
1
lRAS
6
5
1
lRP
3
2
1
lDPL
Tdpl
2
2
1
lRRD
2
2
1
lSREX
Tsrx
1
1
2
lAPW
Tdal
5
4
= [lDPL + lRP]
Self refresh exit to command input
lSEC
9
7
= [lRC]
3
Precharge command to high impedance
(CL = 2)
(CL = 3)
Last data out to active command
(Auto precharge, same bank)
Last data out to precharge (early precharge)
(CL = 2)
(CL = 3)
lHZP
lHZP
Troh
Troh
2
3
2
3
lAPR
1
1
lEP
lEP
–1
–2
–1
–2
Column command to column command
lCCD
Tccd
1
1
Write command to data in latency
lWCD
Tdwd
0
0
DQMB to data in
lDID
Tdqm
0
0
DQMB to data out
lDOD
Tdqz
2
2
CKE to CK disable
lCLE
Tcke
1
1
Register set to active command
lRSA
Tmrd
1
1
/S to command disable
lCDD
0
0
Power down exit to command input
lPEC
1
1
Notes: 1. lRCD to lRRD are recommended value.
2. Be valid [DESL] or [NOP] at next command of self refresh exit.
3. Except [DESL] and [NOP]
相關(guān)PDF資料
PDF描述
HB52RD649DC-A6B 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-A6BL 512MB Unbuffered SDRAM S.O.DIMM
HB52RD649DC-B 512MB Unbuffered SDRAM S.O.DIMM
HB52RF649DC-75B 512MB Unbuffered SDRAM S.O.DIMM
HB52RF649DC-75BL 512MB Unbuffered SDRAM S.O.DIMM
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