參數(shù)資料
型號(hào): HAT3021R-EL-E
廠商: Renesas Technology Corp.
英文描述: Silicon N/P Channel Power MOS FET Power Switching
中文描述: 硅N / P系列頻道功率MOS場(chǎng)效應(yīng)管電源開(kāi)關(guān)
文件頁(yè)數(shù): 9/11頁(yè)
文件大?。?/td> 150K
代理商: HAT3021R-EL-E
HAT3021R
Rev.2.00, Oct.06.2004, page 9 of 10
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
N
γ
s
10
μ
100
μ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot puse
DM
P
PW
T
D =T
θ
ch - f(t) =
γ
s (t) x
θ
ch - f
θ
ch - f = 125
°
C/W, Ta = 25
°
C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0
–0.4
–0.8
–1.2
–1.6
–2.0
–5.0
–2.5
V
GS
= 0V, 5 V
–5 V
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
R
D
Pulse Test
–10 V
Vin Monitor
D.U.T.
Vin
-10 V
R
L
V
= -30 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
90%
10%
t
f
Switching Time Test Circuit
Switching Time Waveform
Rg
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