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參數(shù)資料
| 型號： | HAT3006R |
| 英文描述： | TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 6.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|一對|互補| 30V的五（巴西）直| 6.5AI（四）|蘇 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 61K |
| 代理商： | HAT3006R |
2.0
1.5
1.0
0.5
0
C
50
100
150
200
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
2DieOeain
1DiveOpeaion
Test Condition :
When using the glass epoxy board
(40 x 40 x 1.6 mm)
10
8
6
4
2
0
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
2
4
6
8
10
10 V
6 V
4 V
3 V
2.5 V
Pulse Test
2 V
V = 1.5 V
10
8
6
4
2
0
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
1
2
3
4
5
V = 10 V
Pulse Test
Tc = 75°C
25°C
–25°C
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
1
10
100
0.3
3
30
1ms
PW=
10 μs100 μs
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
1 shot pulse
HAT3001F(N channel)
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