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參數(shù)資料
| 型號： | HAT3004R |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 61K |
| 代理商： | HAT3004R |
Table 2 Electrical Characteristics N Channel
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
V
(BR)DSS
30
voltage
———————————————————————————————————————————
Gate to source breakdown
V
(BR)GSS
±10
voltage
———————————————————————————————————————————
Gate to source leak current
I
GSS
—
———————————————————————————————————————————
Zero gate voltage drain current
I
DSS
—
———————————————————————————————————————————
Gate to source cutoff voltage
V
GS(off)
0.5
———————————————————————————————————————————
Static drain to source on state
R
DS(on)
—
resistance
————————————————————————
—
Symbol
Min
Typ
Max
Unit
Test conditions
—
—
V
I
D
= 10 mA, V
GS
= 0
—
—
V
I
G
= ±200 μA, V
DS
= 0
—
±10
μA
V
GS
= ±6.5 V, V
DS
= 0
—
10
μA
V
DS
= 30 V, V
GS
= 0
—
1.5
V
VDS= 10 V, I
D
= 1 mA
0.1
0.15
I
D
= 2A
V
GS
= 4V *
0.13
0.22
I
D
= 2A
V
GS
= 2.5V *
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
2
4
—
S
I
D
= 2 A
V
DS
= 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
————————————————————————————————
Output capacitance
Coss
—
————————————————————————————————
Reverse transfer capacitance
Crss
—
———————————————————————————————————————————
Turn–on delay time
t
d(on)
—
————————————————————————————————
Rise time
t
r
—
————————————————————————————————
Turn–off delay time
t
d(off)
—
————————————————————————————————
Fall time
t
f
—
———————————————————————————————————————————
Body–drain diode forward
V
DF
—
voltage
———————————————————————————————————————————
Body–drain diode reverse
t
rr
—
recovery time
———————————————————————————————————————————
* Pulse Test
380
—
pF
V
DS
= 10 V
200
—
pF
V
GS
= 0
70
—
pF
f = 1 MHz
15
—
ns
V
GS
= 4 V, I
D
= 2 A
80
—
ns
V
DD
= 10 V
70
—
ns
70
—
ns
0.8
—
V
I
F
= 2.5A, V
GS
= 0
45
—
ns
I
F
= 2.5A, V
GS
= 0
diF / dt = 20 A / μs
HAT3001F
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