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參數(shù)資料
| 型號(hào)： | HAT2204C |
| 廠商： | Renesas Technology Corp. |
| 元件分類： | 靜電保護(hù)器 |
| 英文描述： | Ultra low capacitance unidirectional ESD protection diodes, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管功率開關(guān) |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 141K |
| 代理商： | HAT2204C |
HAT2204C
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
R
DS(on)
|yfs|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
12
±
8
—
—
0.3
—
—
—
8.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
26
34
45
13
770
115
50
10
9.5
36
5
9
1.5
2
0.8
Max
—
±
10
1
1.2
34
44
69
—
—
—
—
—
—
—
—
—
—
—
1.1
Unit
V
μ
A
μ
A
V
m
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±
10
μ
A, V
DS
= 0
V
GS
=
±
6.4 V, V
DS
= 0
V
DS
= 12 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.8 A, V
GS
= 4.5 V
Note3
I
D
= 1.8 A, V
GS
= 2.5 V
Note3
I
D
= 1.8 A, V
GS
= 1.8 V
Note3
I
D
= 1.8 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body - Drain diode forward voltage
Notes: 3. Pulse test
I
D
= 1.8 A, V
GS
= 4.5 V
V
DS
= 10 V, R
L
= 5.6
,
Rg = 4.7
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 3.5 A
I
F
= 3.5 A, V
GS
= 0
Note3
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