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參數(shù)資料
| 型號： | HAT2105T-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Ultra low capacitance bidirectional ESD protection diode, SOD882 (SOD2), Tape reel SMD |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | HAT2105T-EL-E |
HAT2105T
REJ03G0384-0200 Rev.2.00 Aug 06, 2007
Page 2 of 3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
Min.
200
±
15
—
—
1.0
—
—
—
0.56
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
1.6
1.9
2.4
0.86
120
29
10
10
14
24
9
0.9
Max.
—
—
±
10
5
2.1
2.2
2.7
5.5
—
—
—
—
—
—
—
—
1.4
Unit
V
V
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
12 V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 0.5 A, V
GS
= 10 V
Note4
I
D
= 0.5 A, V
GS
= 4 V
Note4
I
D
= 2 A, V
GS
= 5 V
Note4
I
D
= 0.5 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Notes: 4. Pulse test
V
GS
= 5 V, I
D
= 0.5 A
V
DD
30 V
I
F
= 0.5 A, V
GS
= 0
Note4
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