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參數(shù)資料
| 型號(hào)： | HAF2008 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | SILICON N CHANNEL MOSFET SERIES POWER SWITCHING |
| 中文描述： | 硅N溝道MOSFET功率開(kāi)關(guān)系列 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 24K |
| 代理商： | HAF2008 |
HAF2008
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain current
I
D1
I
D2
(25)
—
—
A
V
GS
= 3.5V, V
DS
= 2V
V
GS
= 1.2V, V
DS
= 2V
I
D
= 10mA, V
GS
= 0
I
G
= (300
μ
A), V
DS
= 0
I
G
= (–100
μ
A), V
DS
= 0
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
GS
= 1.2V, V
DS
= 0
V
GS
= –2.4V, V
DS
= 0
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 4V
Note3
Drain current
—
—
10
mA
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
60
—
—
V
(16)
—
—
V
(–2.5)
—
—
V
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(op)1
I
GS(op)2
I
DSS
V
GS(off)
R
DS(on)
—
—
100
μ
A
μ
A
μ
A
μ
A
—
—
50
—
—
1
—
—
–100
Input current (shut down)
—
0.8
—
mA
—
0.35
—
mA
Zero gate voltege drain current
—
—
10
μ
A
Gate to source cutoff voltage
1.0
—
2.25
V
Static drain to source on state
resistance
—
45
60
m
Static drain to source on state
resistance
R
DS(on)
—
28
40
m
I
D
= 10A, V
GS
= 10V
Note3
Forward transfer admittance
|y
fs
|
Coss
(11)
(17)
—
S
I
D
= 10A, V
DS
= 10V
Note3
V
= 10V , V
GS
= 0
f = 1 MHz
Output capacitance
—
(380)
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
( )
—
μ
s
μ
s
μ
s
μ
s
I
D
= 10A, V
GS
= 5V
R
L
= 3
Rise time
—
( )
—
Turn-off delay time
—
( )
—
Fall time
—
( )
—
Body–drain diode forward voltage
—
(1.0)
—
V
I
F
= 20A, V
GS
= 0
I
= 20A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
—
( )
—
ns
Over load shut down
t
os1
t
os2
—
( )
—
ms
V
GS
= 5V, V
DD
= 12V
V
GS
= 5V, V
DD
= 24V
operation time
Note4
Note:
3. Pulse test
4. Include the time shift based on increasing of chennel temperature when operete under over load
condition.
—
( )
—
ms
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