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參數(shù)資料
| 型號： | HAF2002 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET Series Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管系列電源開關(guān) |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 38K |
| 代理商： | HAF2002 |
HAF2002
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
60
V
Gate to source voltage
16
V
Gate to source voltage
–2.8
V
Drain current
20
A
Drain peak current
Note1
40
A
Body-drain diode reverse drain current
20
A
Channel dissipation
30
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Ta = 25
°
C
Tstg
–55 to +150
Typical Operation Characteristics
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Input voltage
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
T
sd
V
OP
3.5
—
—
V
—
—
1.2
V
Input current
—
—
100
μ
A
μ
A
μ
A
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Vi = 1.2V, V
DS
= 0
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Channel temperature
(Gate non shut down)
—
—
50
—
—
1
Input current
—
0.8
—
mA
(Gate shut down)
—
0.35
—
mA
Shut down temperature
—
175
—
°
C
Gate operation voltage
3.5
—
13
V
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|---|---|
| HAF2005 | Silicon N Channel MOS FET Series Power Switching |
| HAF2007 | Silicon N Channel MOS FET Series Power Switching |
| HAF2007L | Silicon N Channel MOS FET Series Power Switching |
| HAF2007S | Silicon N Channel MOS FET Series Power Switching |
| HAF2008 | SILICON N CHANNEL MOSFET SERIES POWER SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF2002-90 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching |
| HAF2002-90-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF2005 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET Series Power Switching |
| HAF2005-90-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF2007 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET Series Power Switching |
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