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參數(shù)資料
| 型號(hào)： | HAF1001 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability |
| 中文描述： | 硅P通道MOS FET的系列電源開關(guān)/過溫度停業(yè)能力 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 53K |
| 代理商： | HAF1001 |
HAF1001
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain current
I
D1
I
D2
V
(BR)DSS
–7
—
—
A
V
GS
= –3.5V, V
DS
= –2V
V
GS
= –1.2V, V
DS
= –2V
I
D
= –10mA, V
GS
= 0
Drain current
—
—
–10
mA
Drain to source breakdown
voltage
–60
—
—
V
Gate to source breakdown
voltage
V
(BR)GSS+
–16
—
—
V
I
G
= –100
μ
A, V
DS
= 0
Gate to source breakdown
voltage
V
(BR)GSS–
3
—
—
V
I
G
= 100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS+1
I
GSS+2
I
GSS+3
I
GSS–
I
GS(op)1
I
GS(op)1
—
—
–100
μ
A
μ
A
μ
A
μ
A
V
GS
= –8V, V
DS
= 0
V
GS
= –3.5V, V
DS
= 0
V
GS
= –1.2V, V
DS
= 0
V
GS
= 2.4V, V
DS
= 0
V
GS
= –8V, V
DS
= 0
V
GS
= –3.5V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –7.5A, V
GS
= –4V
Note3
—
—
–50
—
—
–1
—
—
100
Input current (shut down)
—
–0.8
—
mA
—
–0.35
—
mA
Zero gate voltege drain current I
DSS
Gate to source cutoff voltage V
GS(off)
Static drain to source on state
resistance
—
—
–250
μ
A
–1.1
—
–2.25
V
R
DS(on)
—
100
130
m
Static drain to source on state
resistance
R
DS(on)
—
70
90
m
I
D
= –7.5A
V
GS
= –10V
Note3
I
D
= –7.5A, V
DS
= –10V
Note3
V
DS
= –10V , V
GS
= 0
f = 1 MHz
Forward transfer admittance
|y
fs
|
Coss
5
10
—
S
Output capacitance
—
610
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
7.5
—
μ
s
μ
s
μ
s
μ
s
I
D
= –7.5A, V
GS
= –5V
R
L
= 4
Rise time
—
36
—
Turn-off delay time
—
32
—
Fall time
—
29
—
Body–drain diode forward
voltage
—
–1.0
—
V
I
F
= –15A, V
GS
= 0
Body–drain diode reverse
recovery time
t
rr
—
200
—
ns
I
F
= –15A, V
GS
= 0
diF/ dt =50A/
μ
s
Over load shut down
t
os1
t
os2
—
3.7
—
ms
V
GS
= –5V, V
DD
= –12V
V
GS
= –5V, V
DD
= –24V
operation time
Note4
Note:
3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
—
1
—
ms
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HAF1001-90 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
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| HAF1002(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262VAR |
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