FN2925.9 Die Characteristics DIE DIMENSIONS: 98.4 mils x 67.3 mils x 19 mils 2500 m x 1710m x 483m METALLIZATION: Type: Al, 1% Cu Thickness: 16k" />
參數(shù)資料
型號: HA7-5102-2
廠商: Intersil
文件頁數(shù): 13/13頁
文件大小: 0K
描述: IC OPAMP DUAL 8MHZ PREC 8-DIP
標(biāo)準(zhǔn)包裝: 48
放大器類型: 通用
電路數(shù): 2
轉(zhuǎn)換速率: 3 V/µs
-3db帶寬: 8MHz
電流 - 輸入偏壓: 130nA
電壓 - 輸入偏移: 500µV
電流 - 電源: 3mA
電流 - 輸出 / 通道: 15mA
電壓 - 電源,單路/雙路(±): ±5 V ~ 18 V
工作溫度: -55°C ~ 125°C
安裝類型: 通孔
封裝/外殼: 8-CDIP(0.300",7.62mm)
供應(yīng)商設(shè)備封裝: 8-CERDIP
包裝: 管件
9
FN2925.9
Die Characteristics
DIE DIMENSIONS:
98.4 mils x 67.3 mils x 19 mils
2500
m x 1710m x 483m
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
±2k
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
±2k
Nitride Thickness: 3.5k
±1.5k
SUBSTRATE POTENTIAL (POWERED UP):
Unbiased
TRANSISTOR COUNT:
93
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5102
FIGURE 24. SLEW RATE vs TEMPERATURE
FIGURE 25. RISE TIME vs TEMPERATURE
Typical Performance Curves (Continued)
TEMPERATURE (oC)
-60
20
120
100
80
60
40
0
-20
-40
SLEW
RA
TE
(NO
R
MALIZED)
0.6
0.7
0.8
0.9
1.0
1.1
RL = 2k, CL = 50pF, VS = ±15V
TEMPERATURE (oC)
-60
20
120
100
80
60
40
0
-20
-40
0.6
0.7
0.8
0.9
1.0
1.1
RIS
E
T
IME
(NORMALI
ZED)
RL = 2k, CL = 50pF, VS = ±15V
+IN2
-IN2
OUT2
V+
V-
+IN1
-IN1
OUT1
HA-5102, HA-5104
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