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參數(shù)資料
| 型號： | HA16116FPJ |
| 廠商： | Hitachi,Ltd. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 13/34頁 |
| 文件大?。?/td> | 250K |
| 代理商： | HA16116FPJ |
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HA16116FP/FPJ, HA16121FP/FPJ
13
4. Totem Pole Output Stage Circuit and Power MOS FET Driving Method
The output stage of this IC series is configured of totem pole circuits, allowing direct connection to a power
MOS FET as an external switching device, so long as V
IN
is below the gate breakdown voltage.
If there is a possibility that V
IN
will exceed the gate breakdown voltage of the power MOS FET, a Zener
diode circuit like that shown figure 4.1 or other protective measures should be used. The figure 4.1 shows
an example using a P-channel power MOS FET.
Bias
circuit
P.V
IN
V
O
OUT
Zener diode for
gate protection
Drive circuit
Gate
protection
resistor
E.g.: V = 18 V
Schottky
barrier diode
+
Figure 4.1 P-channel Power MOS FET (example)
5. Vref Undervoltage Error Prevention (UVL) and Overvoltage Protection (OVP) Functions
5.1 Operation Principles
The reference voltage circuit is equipped with UVL and OVP functions.
UVL
In normal operation the Vref output voltage is fixed at 2.5 V. If V
IN
is lower than normal, the UVL
circuit detects the Vref output voltage with a hysteresis of 1.7 V and 2.0 V, and shuts off the PWM
output if Vref falls below this level, in order to prevent malfunction.
OVP
The OVP circuit protects the IC from inadvertent application of a high voltage from outside, such as if
V
IN
is shorted. A Zener diode (5.6 V) and resistor are used between Vref and GND for overvoltage
detection. PWM output is shut off if Vref exceeds approximately 7.0 V.
Note that the PWM output pulse logic and the precision of the switching regulator output voltage are not
guaranteed at an applied voltage of 2.5 V to 7 V.
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