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參數(shù)資料
| 型號： | HA-5177883 |
| 廠商： | Intersil Corporation |
| 英文描述： | Ultra Low Offset Voltage Operational Amplifier |
| 中文描述： | 超低失調(diào)電壓運算放大器 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 35K |
| 代理商： | HA-5177883 |
3-162
Spec Number
511041-883
Specifications HA-5177/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±
15V, R
LOAD
= 2k
, C
LOAD
= 50pF, A
V
= +1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
-55
o
C to +125
o
C
LIMITS
UNITS
μ
V/
o
C
MIN
MAX
Average Offset Voltage
Drift
V
IO
TC
V
CM
= 0V
1
-
0.6
Average Offset Current
Drift
I
IO
TC
Versus Temperature
1
-55
o
C to +125
o
C
-
40
pA/
o
C
Average Bias Current Drift
I
R
TC
R
IN
Versus Temperature
1
-55
o
C to +125
o
C
+25
o
C
-
40
pA/
o
C
Differential Input
Resistance
V
CM
= 0V
1
20
-
M
Low Frequency
Peak-to-Peak Noise Voltage
E
NP-P
0.1Hz to 10Hz
1
+25
o
C
-
0.6
μ
V
P-P
Low Frequency
Peak-to-Peak Noise Current
I
NP-P
0.1Hz to 10Hz
1
+25
o
C
-
45
pA
P-P
Input Noise Voltage
Density
E
N
R
S
= 20
, f
O
= 10Hz
R
S
= 20
, f
O
= 100Hz
R
S
= 20
, f
O
= 1kHz
R
S
= 2M
, f
O
= 10Hz
R
S
= 2M
, f
O
= 100Hz
R
S
= 2M
, f
O
= 1kHz
V
O
= 100mV,
1Hz
≤
f
O
≤
100kHz
V
PEAK
= 10V
R
L
= 2k
, C
L
= 50pF
1
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-
18
nV
/√
Hz
nV
/√
Hz
nV
/√
Hz
pA
/√
Hz
pA
/√
Hz
pA
/√
Hz
1
-
13
1
-
11
Input Noise Current
Density
I
N
1
-
4
1
-
2.3
1
-
1
Gain Bandwidth Product
GBWP
1
2
-
MHz
Full Power Bandwidth
FPBW
1, 2
+25
o
C
8
-
kHz
Minimum Closed Loop
Stable Gain
CLSG
1
-55
o
C to +125
o
C
+
1
-
V/V
Settling Time
t
S
To 0.1% for a 10V Step
1
+25
o
C
+25
o
C
-
15
μ
s
Output Resistance
R
OUT
PC
Open Loop
1
-
70
Power Consumption
V
OUT
= 0V, I
OUT
= 0mA
1, 3
-55
o
C to +125
o
C
-
51
mW
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2
π
V
PEAK
).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLES 1 AND 2)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6, 7
Group A Test Requirements
1, 2, 3, 4, 5, 6, 7
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
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