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參數(shù)資料
| 型號： | H5N2901FN-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 113K |
| 代理商： | H5N2901FN-E |
Rev.1.00, May.28.2004, page 1 of 7
H5N2901FN
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0372-0100Z
Rev.1.00
May.28.2004
Features
Low on-resistance
Low leakage current
High speed switching
Outline
TO-220FN
1
2
3
D
S
G
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Unit
Item
Symbol
Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. STch = 25
°
C, Tch
≤
150
°
C
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
DR (pulse)
I
AP
E
AR
Pch
Note2
θ
ch-c
Tch
Tstg
290
±30
18
72
18
72
6
2.1
30
4.17
150
–55 to +150
V
V
A
A
A
A
A
mJ
W
°
C/W
°
C
°
C
Note1
Note1
Note3
Note3
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