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參數(shù)資料
| 型號(hào)： | H5N2505DL |
| 英文描述： | Datasheet|ADE-208-1376|MAR.20.01|34K |
| 中文描述： | 技術(shù)資料|腺- 208 - 1376 | MAR.20.01 | 34K系列 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | H5N2505DL |
H5N2503P
Rev.1, Jun. 2002, page 2 of 10
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D
(pulse)
I
DR
250
V
Gate to source voltage
±30
V
Drain current
50
A
Drain peak current
Note1
200
A
Body-drain diode reverse drain
current
50
A
Body-drain diode reverse drain peak
current
I
DR
(pulse)
Note1
200
A
Avalanche current
I
AP
Pch
θ
ch-c
Tch
Note3
50
A
Channel dissipation
Note2
150
W
°
C/W
°
C
°
C
Channel to case Thermal Impedance
0.833
Channel temperature
150
Storage temperature
Notes: 1. PW
≤
10 μs, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. Tch
≤
150
°
C
Tstg
–55 to +150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H5N2505DL-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 5A 3-Pin(3+Tab) DPAK(L)-(2) |
| H5N2505DS | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2505DS-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H5N2505DSTL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N2507P-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - LEAD FREE - Rail/Tube |
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