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參數(shù)資料
| 型號： | H11D1-X009T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP SMD T/R |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR > 20% |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | H11D1-X009T |
www.vishay.com
290
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83611
Rev. 1.6, 10-Dec-08
H11D1, H11D2, H11D3, H11D4
Vishay Semiconductors
Optocoupler, Phototransistor
Output, with Base Connection,
High BV
CER
Voltage
Note
T
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Note
Switching times measurement-test circuit and waveforms
OUTPUT
Collector emitter breakdown voltage
I
CE
= 1 mA, R
BE
= 1 M
Ω
H11D1
H11D2
H11D3
H11D4
BV
CER
BV
CER
BV
CER
BV
CER
BV
EBO
C
CE
C
CB
C
EB
R
th
300
300
200
200
7
V
V
V
V
V
pF
pF
pF
K/W
Emitter base breakdown voltage
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Coupling capacitance
I
EB
= 100 μA
V
CE
= 10 V, f = 1 MHz
V
CB
= 10 V, f = 1 MHz
V
EB
= 5 V, f = 1 MHz
7
8
38
250
C
C
0.6
pF
Current transfer ratio
I
F
= 10 mA, V
= 10 V,
R
BE
= 1 M
Ω
I
F
= 10 mA, I
C
= 0.5 mA,
R
BE
= 1 M
Ω
I
C
/I
F
20
%
Collector emitter,
saturation voltage
V
CEsat
0.25
0.4
V
Collector emitter, leakage current
V
CE
= 200 V, R
BE
= 1 M
Ω
H11D1
H11D2
H11D1
H11D2
I
CER
I
CER
I
CER
I
CER
100
100
250
250
nA
nA
μA
μA
V
CE
= 300 V, R
= 1 M
Ω
,
T
amb
= 100 °C
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
I
F
= 10 mA, V
CE
= 10 V,
R
BE
= 1 M
Ω
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Current transfer ratio
CTR
20
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Turn-on time
I
C
= 2 mA (to be adjusted by varying I
F
),
R
L
= 100
Ω
, V
CC
= 10 V
I
C
= 2 mA (to be adjusted by varying I
F
),
R
L
= 100
Ω
, V
CC
= 10 V
I
C
= 2 mA (to be adjusted by varying I
F
),
R
L
= 100
Ω
, V
CC
= 10 V
I
C
= 2 mA (to be adjusted by varying I
F
),
R
L
= 100
Ω
, V
CC
= 10 V
t
on
5
μs
Rise time
t
r
2.5
μs
Turn-off time
t
off
6
μs
Fall time
t
f
5.5
μs
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
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