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STGW40NC60V
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
g
fs
(1)
Forward Transconductance
C
ies
C
oes
C
res
Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
Gate-Collector Charge
I
CL
Turn-Off SOA Minimum
Current
Table 8: Switching On
Symbol
t
d(on)
t
r
(di/dt)
on
Eon
(2)
t
d(on)
t
r
(di/dt)
on
Eon
(2)
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25
°
C and 125
°
C)
Table 9: Switching Off
Symbol
Parameter
Test Conditions
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 390 V, I
C
= 40 A,
R
GE
= 3.3
, V
GE
= 15 V
T
J
= 25
°
C
(see Figure 18)
t
f
Current Fall Time
(3)Turn-off losses include also the tail of the collector current.
Test Conditions
V
CE
= 15 V
,
I
C
= 20 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
20
Max.
Unit
S
Input Capacitance
Output Capacitance
4550
350
105
pF
pF
pF
Total Gate Charge
Gate-Emitter Charge
V
CE
= 390 V, I
C
= 40 A,
V
GE
= 15V,
(see Figure 20)
214
30
96
nC
nC
nC
V
clamp
= 480 V
,
Tj = 150
°
C
R
G
= 100
,
V
GE
= 15V
200
A
Parameter
Test Conditions
V
CC
= 390 V, I
C
= 40 A
R
G
= 3.3
, V
GE
= 15V, Tj= 25
°
C
(see Figure 18)
Min.
Typ.
Max.
Unit
ns
ns
A/μs
μJ
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
43
17
2060
330
450
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 390 V, I
C
= 40 A
R
G
= 3.3
, V
GE
= 15V, Tj=
125
°
C
(see Figure 18)
42
19
1900
640
ns
ns
A/μs
μJ
Min.
Typ.
Max.
Unit
25
ns
t
d
(
off
)
Turn-off Delay Time
140
ns
45
ns
μ
J
μ
J
ns
E
off
(3)
Turn-off Switching Loss
720
970
E
ts
Total Switching Loss
1050
1420
t
r
(V
off
)
t
d
(
off
)
t
f
Off Voltage Rise Time
V
cc
= 390 V, I
C
= 40 A,
R
GE
= 3.3
, V
GE
= 15 V
Tj = 125
°
C
(see Figure 18)
60
Turn-off Delay Time
170
ns
Current Fall Time
77
ns
μ
J
μ
J
E
off
(3)
Turn-off Switching Loss
1400
E
ts
Total Switching Loss
2040