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參數資料
| 型號： | GS9012E |
| 英文描述： | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|進步黨| 20V的五（巴西）總裁| 500mA的一（c）|至92 |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | GS9012E |
GS9013
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
2
Document Number 88196
10-May-02
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Current Gain Group D
V
CE
= 1V, I
C
= 50mA
64
78
96
112
144
—
—
—
—
—
91
112
135
166
202
E
F
G
H
DC Current Gain
h
FE
—
V
CE
= 1V, I
C
= 500mA
40
120
—
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
20
—
—
V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 100μA, I
E
= 0
40
—
—
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 100μA, I
C
= 0
5
—
—
V
Collector Cut-off Current
I
CBO
V
CB
= 25V, I
E
= 0
—
—
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 3V, I
C
= 0
—
—
100
nA
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
—
0.16
0.6
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
—
0.91
1.2
V
Base-Emitter ON Voltage
V
BE(on)
V
CE
= 1V, I
C
= 10mA
0.6
0.67
0.7
V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| GS9012E/E6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92 |
| GS9012E/E7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92 |
| GS9012F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92 |
| GS9012F/E6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92 |
| GS9012F/E7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-92 |
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