參數(shù)資料
型號: GS882V37AB
廠商: GSI TECHNOLOGY
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 256K × 36 9Mb以上SCD的/雙氰胺同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 12/28頁
文件大?。?/td> 637K
代理商: GS882V37AB
GS882V37AB/D-250/225/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 7/2004
12/28
2002, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
0.5 to 3.6
V
0.5 to 3.6
V
Voltage on Clock Input Pin
0.5 to 3.6
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
3.6 V max.)
0.5 to V
DD
+0.5 (
3.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
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