參數(shù)資料
型號: GS882V37AB-225I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 2.2 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 12/28頁
文件大?。?/td> 637K
代理商: GS882V37AB-225I
GS882V37AB/D-250/225/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 7/2004
12/28
2002, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
0.5 to 3.6
V
0.5 to 3.6
V
Voltage on Clock Input Pin
0.5 to 3.6
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
3.6 V max.)
0.5 to V
DD
+0.5 (
3.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
相關PDF資料
PDF描述
GS882V37AB-250 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AB-250I 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AD-200 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AD-200I 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AD-225 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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