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參數(shù)資料
| 型號(hào)： | GS882V37AB-200I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| 中文描述： | 256K X 36 CACHE SRAM, 2.5 ns, PBGA119 |
| 封裝： | PLASTIC, BGA-119 |
| 文件頁數(shù)： | 13/28頁 |
| 文件大?。?/td> | 637K |
| 代理商： | GS882V37AB-200I |
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GS882V37AB/D-250/225/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 7/2004
13/28
2002, GSI Technology
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
1.8 V Supply Voltage
V
DD
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ
1.6
1.8
2.0
V
Note:
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
I/O Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
—
V
DD
+ 0.3
V
1, 2
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.3*V
DD
V
1, 2
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
—
V
DDQ
+ 0.3
V
1, 2, 3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.3*V
DD
V
1, 2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
Note:
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
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