參數(shù)資料
型號: GS881Z18BGD-150V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 9Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數(shù): 9/37頁
文件大小: 773K
代理商: GS881Z18BGD-150V
GS881Z18/32/36D-xxxV165-Bump BGA Pin Description
Symbol
A
0
, A
1
A
DQ
A
DQ
B
DQ
C
DQ
D
B
A
, B
B
, B
C
, B
D
NC
CK
CKE
W
E
1
E
3
E
2
G
ADV
ZZ
FT
LBO
Type
I
I
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
I/O
Data Input and Output pins
I
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low
No Connect
Clock Input Signal; active high
Clock Enable; active low
Write Enable; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active high
Sleep mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
I
I
I
I
I
I
I
I
I
I
I
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
I
Scan Test Clock
MCH
Must Connect High
DNU
V
DD
V
SS
V
DDQ
Do Not Use
I
Core power supply
I
I/O and Core Ground
I
Output driver power supply
GS881Z18/32/36B(T/D)-xxxV
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
9/37
2006, GSI Technology
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