參數(shù)資料
型號(hào)： GS881E36AT-150
廠商： GSI TECHNOLOGY
元件分類(lèi)： DRAM
英文描述： 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述： 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
封裝： TQFP-100
文件頁(yè)數(shù)： 19/37頁(yè)
文件大?。?/td> 662K
代理商： GS881E36AT-150
GS881E18/36AT-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
11/29
2001, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS881E36AT-150IT 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-150T 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-166 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-166I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-166IT 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E36AT-150I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-150IT 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-150T 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-166 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-166I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
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