參數(shù)資料
型號: GS881E18T-11I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 11 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 12/34頁
文件大?。?/td> 487K
代理商: GS881E18T-11I
Rev: 1.10 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
12/34
2000, Giga Semconductor, Inc.
Preliminary
GS881E18/36T-11/11.5/100/80/66
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagramshows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition fromRead cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal Read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAMs drivers off and for incomng data to meet
Data Input Set Up Time.
3.
相關(guān)PDF資料
PDF描述
GS881E18T-66 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-66I 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-80 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-80I 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E36T-100 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E18T-66 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-66I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-80 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-80I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs