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參數(shù)資料
| 型號： | GS881E18BD-150V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| 中文描述： | 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數(shù)： | 34/36頁 |
| 文件大?。?/td> | 771K |
| 代理商： | GS881E18BD-150V |
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GS881E18/32/36B(T/D)-xxxV
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
34/36
2006, GSI Technology
512K x 18
512K x 18
256K x 32
256K x 32
256K x 32
256K x 36
256K x 36
256K x 36
512K x 18
512K x 18
512K x 18
256K x 32
256K x 32
256K x 32
256K x 36
256K x 36
256K x 36
512K x 18
512K x 18
512K x 18
256K x 32
256K x 32
256K x 32
256K x 36
256K x 36
256K x 36
512K x 18
512K x 18
512K x 18
Notes:
1.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS881E18BT-150IVT.
2.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
4.
MP = Mass Production. PQ = Pre-Qualification.
5.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
GS881E18BGT-200IV
GS881E18BGT-150IV
GS881E36BGT-250IV
GS881E32BGT-200IV
GS881E32BGT-150IV
GS881E36BGT-250IV
GS881E36BGT-200IV
GS881E36BGT-150IV
GS881E18BD-250V
GS881E18BD-200V
GS881E18BD-150V
GS881E32BD-250V
GS881E32BD-200V
GS881E32BD-150V
GS881E36BD-250V
GS881E36BD-200V
GS881E36BD-150V
GS881E18BD-250IV
GS881E18BD-200IV
GS881E18BD-150IV
GS881E32BD-250IV
GS881E32BD-200IV
GS881E32BD-150IV
GS881E36BD-250IV
GS881E36BD-200IV
GS881E36BD-150IV
GS881E18BGD-250V
GS881E18BGD-200V
GS881E18BGD-150V
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
I
I
I
I
I
I
I
I
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
MP
MP
MP
MP
MP
MP
MP
MP
MP
MP
MP
MP
MP
MP
MP
MP
MP
MP
C
C
C
C
C
C
C
C
C
I
I
I
I
I
I
I
I
I
C
C
C
Ordering Information for GSI Synchronous Burst RAMs (Continued)
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS881E18BD-200IV | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BD-200V | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BD-250IV | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BD-250V | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BGD-150IV | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS881E18BD-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BD-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BD-200IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BD-200V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS881E18BD-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
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