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  • 參數(shù)資料
    型號(hào): GS88136BT-250I
    廠商: GSI TECHNOLOGY
    元件分類(lèi): DRAM
    英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
    中文描述: 256K X 36 CACHE SRAM, 5.5 ns, PQFP100
    封裝: TQFP-100
    文件頁(yè)數(shù): 28/39頁(yè)
    文件大?。?/td> 791K
    代理商: GS88136BT-250I
    Select DR
    Capture DR
    0
    Shift DR
    Exit1 DR
    Pause DR
    Exit2 DR
    Update DR
    1
    Select IR
    Capture IR
    0
    Shift IR
    Exit1 IR
    Pause IR
    Exit2 IR
    Update IR
    1
    Test Logic Reset
    Run Test Idle
    0
    1
    0
    1
    1
    0
    1
    1
    1
    0
    0
    1
    1
    0
    0
    0
    0
    1
    1
    0
    0
    0
    0
    0
    1
    1
    1
    1
    GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)
    Rev: 1.05 11/2005
    Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
    28/39
    2002, GSI Technology
    JTAG Tap Controller State Diagram
    Instruction Descriptions
    BYPASS
    When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This
    occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facili-
    tate testing of other devices in the scan path.
    SAMPLE/PRELOAD
    SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is
    loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and
    I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and
    are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because
    the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents
    while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will
    not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the
    TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP
    operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then
    places the boundary scan register between the TDI and TDO pins.
    EXTEST
    EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with
    all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is
    still determined by its input pins.
    相關(guān)PDF資料
    PDF描述
    GS88136BT-300 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
    GS88136BT-300I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
    GS88136BT-333 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
    GS88136BT-333I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
    GS88136BT-150V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    GS88136BT-250IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
    GS88136BT-250V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
    GS88136BT-300 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
    GS88136BT-300I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
    GS88136BT-333 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs