參數(shù)資料
型號: GS88136BT-200V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 6.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 15/36頁
文件大?。?/td> 776K
代理商: GS88136BT-200V
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
GS88118/32/36B(T/D)-xxxV
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/36
2006, GSI Technology
Simplified State Diagram with G
相關PDF資料
PDF描述
GS88136BT-250IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E36AD-133I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166T 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-200 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
相關代理商/技術參數(shù)
參數(shù)描述
GS88136BT-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs