參數(shù)資料
型號: GS88132BT-200I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 32 CACHE SRAM, 6.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 15/39頁
文件大?。?/td> 791K
代理商: GS88132BT-200I
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)
Rev: 1.05 11/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/39
2002, GSI Technology
Simplified State Diagram with G
相關(guān)PDF資料
PDF描述
GS88132BT-300 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88132BT-300I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-150I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-200 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88132BT-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88132BT-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88132BT-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88132BT-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88132CD-150 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 8MBIT 256KX32 7.5NS/3.8NS 165FPBGA - Trays