參數(shù)資料
型號(hào): GS880Z36AT-133
廠商: Electronic Theatre Controls, Inc.
英文描述: 9Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 9MB的流水線和流量,通過(guò)同步唑的SRAM
文件頁(yè)數(shù): 15/25頁(yè)
文件大?。?/td> 753K
代理商: GS880Z36AT-133
Rev: 1.02 9/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/25
2001, Giga Semiconductor, Inc.
GS880Z18/36AT-250/225/200/166/150/133
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
40
25
85
°
C
2
Note:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
R
Θ
JA
R
Θ
JA
R
Θ
JC
Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
40
°
C/W
°
C/W
°
C/W
1,2
Junction to Ambient (at 200 lfm)
four
24
1,2
Junction to Case (TOP)
9
3
20% tKC
V
SS
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
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