- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383053 > GS880Z18AT-250 (Electronic Theatre Controls, Inc.) 9Mb Pipelined and Flow Through Synchronous NBT SRAM PDF資料下載
參數(shù)資料
| 型號： | GS880Z18AT-250 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 9MB的流水線和流量，通過同步唑的SRAM |
| 文件頁數(shù)： | 15/25頁 |
| 文件大?。?/td> | 753K |
| 代理商： | GS880Z18AT-250 |
Rev: 1.02 9/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/25
2001, Giga Semiconductor, Inc.
GS880Z18/36AT-250/225/200/166/150/133
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
Note:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
R
Θ
JA
R
Θ
JA
R
Θ
JC
Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
40
°
C/W
°
C/W
°
C/W
1,2
Junction to Ambient (at 200 lfm)
four
24
1,2
Junction to Case (TOP)
—
9
3
20% tKC
V
SS
–
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
相關PDF資料 |
PDF描述 |
|---|---|
| GS880Z18AT-250I | 2 MG 3.3V OTP PROM (UMC) - NOT RECOMMENDED for NEW DESIGN |
| GS880Z18AT-133 | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z18AT-133I | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z18AT-150 | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z18AT-150I | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS880Z18AT-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z18BGT-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z18BGT-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z18BGT-150IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z18BGT-150V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。