參數(shù)資料
型號： GS8662R36E-250I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 72Mb SigmaCIO DDR-II Burst of 4 SRAM
中文描述： 2M X 36 DDR SRAM, 0.45 ns, PBGA165
封裝： 15 MM X 17 MM, 1MM PITCH, FPBGA-165
文件頁數(shù)： 15/37頁
文件大?。?/td> 942K
代理商： GS8662R36E-250I
Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
15/37
2005, GSI Technology
B4 State Diagram
Power-Up
NOP
Load New
Address
DDR Read
DDR Write
LOAD
READ
WRITE
LOAD
LOAD
LOAD
LOAD
Notes:
1.
2.
3.
The internal burst address counter is a 4-bit linear counter (i.e., when first address is A0, next internal burst address is A0+1).
“READ” refers to read active status with R/W = High, “WRITE” refers to write inactive status with R/W = Low.
“LOAD” refers to read new address active status with LD = Low, “LOAD” refers to read new address inactive status with LD = High.
LOAD
Increment
Read Address
Increment
Write Address
Always
Always
READ
WRITE
相關(guān)PDF資料
PDF描述
GS8662R36E-300 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R36E-300I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R36E-333 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R36E-333I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R36GE-167 72Mb SigmaCIO DDR-II Burst of 4 SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8662R36E-300 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Trays
GS8662R36E-300I 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Trays
GS8662R36E-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R36E-333I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R36GE-167 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
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