參數(shù)資料
型號: GS8662QT10BD-200I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 8M X 9 QDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù): 4/29頁
文件大?。?/td> 303K
代理商: GS8662QT10BD-200I
GS8662QT07/10/19/37BD-357/333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 5/2011
12/29
2011, GSI Technology
Recommended Operating Conditions
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 2.9
V
VDDQ
Voltage in VDDQ Pins
–0.5 to VDD
V
VREF
Voltage in VREF Pins
–0.5 to VDDQ
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 ( 2.9 V max.)
V
VIN
Input Voltage (Address, Control, Data, Clock)
–0.5 to VDDQ +0.5 ( 2.9 V max.)
V
VTIN
Input Voltage (TCK, TMS, TDI)
–0.5 to VDDQ +0.5 ( 2.9 V max.)
V
IIN
Input Current on Any Pin
+/–100
mA dc
IOUT
Output Current on Any I/O Pin
+/–100
mA dc
TJ
Maximum Junction Temperature
125
oC
TSTG
Storage Temperature
–55 to 125
oC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
VDD
1.7
1.8
1.9
V
I/O Supply Voltage
VDDQ
1.4
VDD
V
Reference Voltage
VREF
VDDQ/2 – 0.05
VDDQ/2 + 0.05
V
Note:
The power supplies need to be powered up simultaneously or in the following sequence: VDD, VDDQ, VREF, followed by signal inputs. The power
down sequence must be the reverse. VDDQ must not exceed VDD. For more information, read AN1021 SigmaQuad and SigmaDDR Power-Up.
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Junction Temperature
(Commercial Range Versions)
TJ
025
85
C
Junction Temperature
(Industrial Range Versions)*
TJ
–40
25
100
C
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
相關(guān)PDF資料
PDF描述
GS8662QT10BGD-250T 8M X 9 QDR SRAM, 0.45 ns, PBGA165
GS8662T06BD-350I 8M X 8 DDR SRAM, 0.45 ns, PBGA165
GS8662T06BD-350T 8M X 8 DDR SRAM, 0.45 ns, PBGA165
GS8672Q38BE-500I 2M X 36 QDR SRAM, 0.45 ns, PBGA165
GS880F32AGT-5.5IT 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8662R08BD-167 制造商:GSI Technology 功能描述:GS8662R08BD-167 - Trays
GS8662R08BD-200 制造商:GSI Technology 功能描述:GS8662R08BD-200 - Trays
GS8662R08BD-200I 制造商:GSI Technology 功能描述:GS8662R08BD-200I - Trays
GS8662R08E 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-167 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM