參數(shù)資料
型號(hào)： GS8662Q09E-200I
廠商： GSI TECHNOLOGY
元件分類(lèi)： DRAM
英文描述： 72Mb SigmaQuad-II Burst of 2 SRAM
中文描述： 8M X 9 STANDARD SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù)： 7/35頁(yè)
文件大?。?/td> 993K
代理商： GS8662Q09E-200I
Preliminary
GS8662Q08/09/18/36E-300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
7/35
2005, GSI Technology
Background
Separate I/O SRAMs, from a system architecture point of view, are attractive in applications where alternating reads and writes are
needed. Therefore, the SigmaQuad-II SRAM interface and truth table are optimized for alternating reads and writes. Separate I/O
SRAMs are unpopular in applications where multiple reads or multiple writes are needed because burst read or write transfers from
Separate I/O SRAMs can cut the RAM’s bandwidth in half.
Alternating Read-Write Operations
SigmaQuad-II SRAMs follow a few simple rules of operation.
- Read or Write commands issued on one port are never allowed to interrupt an operation in progress on the other port.
- Read or Write data transfers in progress may not be interrupted and re-started.
- R and W high always deselects the RAM.
- All address, data, and control inputs are sampled on clock edges.
In order to enforce these rules, each RAM combines present state information with command inputs. See the Truth Table for
details.
SigmaQuad-II B2 SRAM DDR Read
The read port samples the status of the Address Input and R pins at each rising edge of K. A low on the Read Enable-bar pin, R,
begins a read cycle. Data can be clocked out after the next rising edge of K with a rising edge of C (or by K if C and C are tied
high), and after the following rising edge of K with a rising edge of C (or by K if C and C are tied high). Clocking in a high on the
Read Enable-bar pin, R, begins a read port deselect cycle.
SigmaQuad-II B2 Double Data Rate SRAM Read First
Read A
NOP
Write B
Read C Write D
Read E Write F
Read G Write H
A
B
C
D
E
F
G
H
B
B+1
D
D+1
F
F+1
H
H+1
B
B+1
D
D+1
F
F+1
H
H+1
A
A+1
C
C+1
E
K
K
Address
R
W
BWx
D
C
C
Q
CQ
CQ
相關(guān)PDF資料
PDF描述
GS8662Q09E-250 72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09E-250I 72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09E-300 72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09E-300I 72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09GE-167 72Mb SigmaQuad-II Burst of 2 SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8662Q09E-250 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09E-250I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09E-300 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09E-300I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM
GS8662Q09GE-167 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM
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