參數(shù)資料
型號(hào)： GS8644Z18GE-225T
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 4M X 18 ZBT SRAM, 6.5 ns, PBGA165
封裝： 17 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁(yè)數(shù)： 5/31頁(yè)
文件大?。?/td> 1172K
代理商： GS8644Z18GE-225T
GS8644Z18E/GS8644Z36E
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05b 5/2010
13/31
2003, GSI Technology
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
2.0
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.8
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.3*VDD
V
1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.3*VDD
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C
2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
相關(guān)PDF資料
PDF描述
GS8662QT10BD-200I 8M X 9 QDR SRAM, 0.45 ns, PBGA165
GS8662QT10BGD-250T 8M X 9 QDR SRAM, 0.45 ns, PBGA165
GS8662T06BD-350I 8M X 8 DDR SRAM, 0.45 ns, PBGA165
GS8662T06BD-350T 8M X 8 DDR SRAM, 0.45 ns, PBGA165
GS8672Q38BE-500I 2M X 36 QDR SRAM, 0.45 ns, PBGA165
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8644Z36 制造商:未知廠家 制造商全稱:未知廠家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8644Z36B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8644Z36B-133 制造商:未知廠家 制造商全稱:未知廠家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8644Z36B-133I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8644Z36B-150 制造商:未知廠家 制造商全稱:未知廠家 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*