參數(shù)資料
型號: GS8644V36B-166I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述: 2M X 36 CACHE SRAM, 7 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, BGA-119
文件頁數(shù): 33/40頁
文件大?。?/td> 843K
代理商: GS8644V36B-166I
Product Preview
GS8644V18(B/E)/GS8644V36(B/E)/GS8644V72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
33/40
2003, GSI Technology
Boundary Scan (BSDL Files)
For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications
Engineering Department at: apps@gsitechnology.com.
JTAG Port AC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
TCK Cycle Time
tTKC
50
ns
TCK Low to TDO Valid
tTKQ
20
ns
TCK High Pulse Width
tTKH
20
ns
TCK Low Pulse Width
tTKL
20
ns
TDI & TMS Set Up Time
tTS
10
ns
TDI & TMS Hold Time
tTH
10
ns
相關(guān)PDF資料
PDF描述
GS8644V36B-200 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V36B-200I 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V36B-225 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V36B-225I 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V36B-250 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8644V36B-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V36B-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V36B-225 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V36B-225I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS8644V36B-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs