- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384354 > GS8644V18E-200I (GSI TECHNOLOGY) 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs PDF資料下載
參數(shù)資料
| 型號(hào)： | GS8644V18E-200I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 4M X 18 CACHE SRAM, 6.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FBGA-165 |
| 文件頁(yè)數(shù)： | 21/40頁(yè) |
| 文件大?。?/td> | 843K |
| 代理商： | GS8644V18E-200I |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)當(dāng)前第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)
Product Preview
GS8644V18(B/E)/GS8644V36(B/E)/GS8644V72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
21/40
2003, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
4.0
Max
—
Min
4.4
Max
—
Min
5.0
Max
—
Min
6.0
Max
—
Min
6.7
Max
—
Min
7.5
Max
—
Pipeline
Clock Cycle Time
Clock to Output Valid
(x18/x36)
Clock to Output Valid
(x72)
Clock to Output Invalid
Clock to Output in Low-Z
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
Clock to Output in Low-Z
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
(x18/x36)
Clock to Output in
High-Z
(x72)
G to Output Valid
(x18/x36)
G to Output Valid
(x72)
G to output in Low-Z
G to output in High-Z
(x18/x36)
G to output in High-Z
(x72)
ZZ setup time
tKC
ns
tKQ
—
2.3
—
2.5
—
2.7
—
2.9
—
3.3
—
3.5
ns
tKQ
—
2.6
—
2.7
—
2.8
—
2.9
—
3.3
—
3.5
ns
tKQX
tLZ
1
tS
tH
tKC
tKQ
tKQX
tLZ
1
tS
tH
tKH
tKL
1.0
1.0
1.3
0.2
6.5
—
3.0
3.0
1.5
0.5
1.3
1.5
—
—
—
—
—
6.5
—
—
—
—
—
—
1.0
1.0
1.3
0.3
6.5
—
3.0
3.0
1.5
0.5
1.3
1.5
—
—
—
—
—
6.5
—
—
—
—
—
—
1.0
1.0
1.4
0.4
6.5
—
3.0
3.0
1.5
0.5
1.3
1.5
—
—
—
—
—
6.5
—
—
—
—
—
—
1.0
1.0
1.5
0.5
7.0
—
3.0
3.0
1.5
0.5
1.3
1.5
—
—
—
—
—
7.0
—
—
—
—
—
—
1.0
1.0
1.5
0.5
7.5
—
3.0
3.0
1.5
0.5
1.5
1.7
—
—
—
—
—
7.5
—
—
—
—
—
—
1.0
1.0
1.5
0.5
8.5
—
3.0
3.0
1.5
0.5
1.7
2
—
—
—
—
—
8.5
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Flow
Through
tHZ
1
1.0
2.3
1.0
2.5
1.0
2.7
1.0
2.9
1.0
3.0
1.0
3.0
ns
tHZ
1
1.0
2.6
1.0
2.7
1.0
2.8
1.0
2.9
1.0
3.0
1.0
3.0
ns
tOE
—
2.3
—
2.5
—
2.7
—
2.9
—
3.3
—
3.5
ns
tOE
—
2.6
—
2.7
—
2.8
—
2.9
—
3.3
—
3.5
ns
tOLZ
1
0
—
0
—
0
—
0
—
0
—
0
—
ns
tOHZ
1
—
2.3
—
2.5
—
2.7
—
2.9
—
3.0
—
3.0
ns
tOHZ
1
—
2.6
—
2.7
—
2.8
—
2.9
—
3.0
—
3.0
ns
tZZS
2
tZZH
2
tZZR
5
—
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
ZZ recovery
1
20
—
—
1
—
—
1
—
—
1
—
—
1
—
—
1
—
—
ns
ns
20
20
20
20
20
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8644V18E-225 | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS8644V18E-225I | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS8644V18E-250 | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS8644V18E-250I | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS8644V36B-133 | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8644V18E-225 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS8644V18E-225I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS8644V18E-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS8644V18E-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS8644V18GB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 4MX18 6.5NS/3NS 119FBGA - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。