參數(shù)資料
型號(hào)： GS864436E-150V
廠(chǎng)商： GSI TECHNOLOGY
元件分類(lèi)： DRAM
英文描述： 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
中文描述： 2M X 36 CACHE SRAM, 7.5 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù)： 30/32頁(yè)
文件大?。?/td> 811K
代理商： GS864436E-150V
Preliminary
GS864418/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
30/32
2003, GSI Technology
4M x 18
GS864418E-250
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
250/6.5
C
PQ
4M x 18
GS864418E-225V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
225/6.5
C
PQ
4M x 18
GS864418E-200V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
200/6.5
C
PQ
4M x 18
GS864418E-166V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
166/8
C
PQ
4M x 18
GS864418E-150V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
150/8.5
C
PQ
4M x 18
GS864418E-133V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
133/8.5
C
PQ
2M x 36
GS864436E-250V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
250/6.5
C
PQ
2M x 36
GS864436E-225V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
225/6.5
C
PQ
2M x 36
GS864436E-200V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
200/6.5
C
PQ
2M x 36
GS864436E-166V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
166/8
C
PQ
2M x 36
GS864436E-150V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
150/8.5
C
PQ
2M x 36
GS864436E-133V
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
133/8.5
C
PQ
4M x 18
GS864418E-250IV
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
250/6.5
I
PQ
4M x 18
GS864418E-225IV
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
225/6.5
I
PQ
4M x 18
GS864418E-200IV
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
200/6.5
I
PQ
4M x 18
GS864418E-166IV
Synchronous Burst MCM
1.8 V or 2.5 V
RoHS-compliant
165 BGA
166/8
I
PQ
Ordering Information for GSI Synchronous Burst RAMs (Continued)
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
Notes:
1.
2.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864418B-150IB.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
PQ = Pre-Qualification.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
3.
4.
5.
相關(guān)PDF資料
PDF描述
GS864436E-166 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864436E-166I 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864436E-166IV 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864436E-166V 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864436E-200 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS864436E-166 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 7NS/3.5NS 165FBGA - Trays
GS864436E-166I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864436E-166IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864436E-166V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864436E-200 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
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