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參數(shù)資料
| 型號(hào)： | GS8642ZV72GC-300I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 1M X 72 ZBT SRAM, 5.5 ns, PBGA209 |
| 封裝： | 22 X 14 MM, 1 MM PITCH, LEAD FREE, BGA-209 |
| 文件頁數(shù)： | 10/32頁 |
| 文件大小： | 805K |
| 代理商： | GS8642ZV72GC-300I |
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GS8642ZV18(B)/GS8642ZV36(B)/GS8642ZV72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 5/2005
10/32
2004, GSI Technology
Deselect
New Read
New Write
Burst Read
Burst Write
W
R
B
R
B
W
D
D
B
B
W
R
D
B
W
R
D
D
Current State (n)
Next State (n+1)
Transition
Input Command Code
Key
Notes
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
2. W, R, B, and D represent input command
codes as indicated in the Synchronous Truth Table.
Clock (CK)
Command
Current State
Next State
n
n+1
n+2
n+3
Current State and Next State Definition for
Pipelined and Flow through Read/Write Control State Diagram
W
R
Pipelined and Flow Through Read Write Control State Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS864418E-133I | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-250IV | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-V | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864436E-133 | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864436E-133I | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS864418 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864418B | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864418B-133 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 8.5NS/4NS 119FBGA - Trays |
| GS864418B-133I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 8.5NS/4NS 119FBGA - Trays |
| GS864418B-133V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 8.5NS/4NS 119FPBGA - Trays |
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