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參數(shù)資料
| 型號： | GS8640E36T-200IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| 中文描述： | 2M X 36 CACHE SRAM, 7.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 21/23頁 |
| 文件大小： | 601K |
| 代理商： | GS8640E36T-200IV |
GS8640E18/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
21/23
2004, GSI Technology
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
250/6.5
200/7.5
167/8
250/6.5
200/7.5
167/8
250/6.5
200/7.5
167/8
250/6.5
200/7.5
167/8
250/6.5
200/7.5
167/8
250/6.5
200/7.5
167/8
250/6.5
200/7.5
167/8
250/6.5
200/7.5
167/8
250/6.5
200/7.5
167/8
250/6.5
200/7.5
T
A3
Status
4
4M x 18
4M x 18
4M x 18
2M x 32
2M x 32
2M x 32
2M x 36
2M x 36
2M x 36
4M x 18
4M x 18
4M x 18
2M x 32
2M x 32
2M x 32
2M x 36
2M x 36
2M x 36
4M x 18
4M x 18
4M x 18
2M x 32
2M x 32
2M x 32
2M x 36
2M x 36
2M x 36
4M x 18
4M x 18
Notes:
1.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8640E18T-300IVT.
2.
device is Pipeline/Flow Through mode-selectable by the user.
3.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
4.
PQ = Pre-Qualification.
5.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
GS8640E18T-250V
GS8640E18T-200V
GS8640E18T-167V
GS8640E32T-250V
GS8640E32T-200V
GS8640E32T-167V
GS8640E36T-250V
GS8640E36T-200V
GS8640E36T-167V
GS8640E18T-250IV
GS8640E18T-200IV
GS8640E18T-167IV
GS8640E32T-250IV
GS8640E32T-200IV
GS8640E32T-167IV
GS8640E36T-250IV
GS8640E36T-200IV
GS8640E36T-167IV
GS8640E18GT-250V
GS8640E18GT-200V
GS8640E18GT-167V
GS8640E32GT-250V
GS8640E32GT-200V
GS8640E32GT-167V
GS8640E36GT-250V
GS8640E36GT-200V
GS8640E36GT-167V
GS8640E18GT-250IV
GS8640E18GT-200IV
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
C
C
C
C
C
C
C
C
C
I
I
I
I
I
I
I
I
I
C
C
C
C
C
C
C
C
C
I
I
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8640E36T-200V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E36T-250IV | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E36T-250V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18GT-167IV | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18GT-167V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8640E36T-200V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E36T-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E36T-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640EV18T-200 | 制造商:GSI Technology 功能描述:4M X 18 (72 MEG) SYNCH BURST DCD - Trays |
| GS8640EV18T-300 | 制造商:GSI Technology 功能描述:4M X 18 (72 MEG) SYNCH BURST DCD - Trays |
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