參數(shù)資料
型號: GS8322V72GC-133
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 512K X 72 CACHE SRAM, 8.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209
文件頁數(shù): 23/42頁
文件大?。?/td> 1038K
代理商: GS8322V72GC-133
Preliminary
GS8322V18(B/E)/GS8322V36(B/E)/GS8322V72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
23/42
2003, GSI Technology
Flow Through Mode Timing (SCD)
Begin
Read A
Cont
Cont
Write B
Read C
Read C+1 Read C+2 Read C+3 Read C
Cont
Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
ADSC initiated read
tS
tH
tS
tKC
tKL
tKH
A
B
C
Q(A)
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
Q(C)
E2 and E3 only sampled with ADSC
Deselected with E1
Fixed High
CK
ADSP
ADSC
ADV
A0–An
GW
BW
Ba–Bd
E1
E2
E3
G
DQa–DQd
相關PDF資料
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GS8322V72GC-133I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V72GC-150 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS8322V72GC-150I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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