參數(shù)資料
型號(hào): GS8170DW36AGC-350I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
中文描述: 512K X 36 STANDARD SRAM, 1.6 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209
文件頁數(shù): 11/32頁
文件大?。?/td> 766K
代理商: GS8170DW36AGC-350I
GS8170DW36/72AC-350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
11/32
2003, GSI Technology
It should be noted that deselection of the RAM via E2 and E3 also deselects the Echo Clock output drivers. The deselection of
Echo Clock drivers is always pipelined to the same degree as output data. Deselection of the RAM via E1 does not deactivate the
Echo Clocks.
In some applications it may be appropriate to pause between banks; to deselect both RAMs with E1 before resuming read
operations. An E1 deselect at a bank switch will allow at least one clock to be issued from the new bank before the first read cycle
in the bank. Although the following drawing illustrates a E1 read pause upon switching from Bank 1 to Bank 2, a write to Bank 2
would have the same effect, causing the RAM in Bank 2 to issue at least one clock before it is needed.
Echo Clock Control in Two Banks of SigmaRAMs
Note: E1\ does not deselect the Echo Clock Outputs. Echo Clock outputs are synchronously deselected by E2 or E3 being sampled false.
QD
CQ
Bank 1
CQ
Bank 2
DQ
Bank 2
QB
CQ1 + CQ2
QC
Address
A
B
/E
1
/E2 Bank 1
E2 Bank 2
DQ
Bank 1
QA
ADV
F
D
E
C
Read
Read
Read
CK
Read
Read
相關(guān)PDF資料
PDF描述
GS8170DW72AC-250 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72AC-250I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72AC-300 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72AC-300I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72AC-333 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
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