參數(shù)資料
型號(hào): GS8170DW36AGC-350
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
中文描述: 512K X 36 STANDARD SRAM, 1.6 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209
文件頁(yè)數(shù): 18/32頁(yè)
文件大小: 766K
代理商: GS8170DW36AGC-350
GS8170DW36/72AC-350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
18/32
2003, GSI Technology
Operating Currents
Parameter
Symbol
-350
-333
-300
-250
Test Conditions
0°C
to
70°C
–40°C
to
+85°C
0°C
to
70°C
–40°C
to
+85°C
0°C
to
70°C
–40°C
to
+85°C
0°C
to
70°C
–40°C
to
+85°C
Operating
Current
x72
I
DDP
(PL)
365 mA
375 mA
345 mA
355 mA
320 mA
330 mA
275 mA
285 mA
E1
V
IL
Max.
tKHKH
tKHKH Min.
All other inputs
V
IL
V
IN
V
IH
x36
I
DDP
(PL)
265 mA
275 mA
245 mA
255 mA
225 mA
235 mA
200 mA
210 mA
Chip Disable
Current
x72
I
SB1
(PL)
80 mA
90 mA
75 mA
85 mA
70 mA
80 mA
65 mA
75 mA
E1
V
IH
Min. or
tKHKH
tKHKH Min.
All other inputs
V
IL
V
IN
V
IH
x36
I
SB1
(PL)
75 mA
85 mA
70 mA
80 mA
65 mA
75 mA
60 mA
70 mA
Bank Deselect
Current
x72
I
SB2
(PL)
80 mA
90 mA
75 mA
85 mA
70 mA
80 mA
65 mA
75 mA
E2 or E3 False
tKHKH
tKHKH Min.
All other inputs
V
IL
V
IN
V
IH
x36
I
SB2
(PL)
75 mA
85 mA
70 mA
80 mA
65 mA
75 mA
60 mA
70 mA
CMOS
Deselect
Current
I
DD3
45 mA
55 mA
45 mA
55 mA
45 mA
55 mA
45 mA
55 mA
Device Deselected
All inputs
V
SS
+ 0.10 V
V
IN
V
DD
– 0.10 V
相關(guān)PDF資料
PDF描述
GS8170DW36AGC-350I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72AC-250 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72AC-250I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72AC-300 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72AC-300I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
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GS8170DW72AC-250 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 2.1NS 209FBGA - Trays
GS8170DW72AC-250I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 2.1NS 209FBGA - Trays