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參數(shù)資料
| 型號： | GS8170DW36AGC-300I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM |
| 中文描述： | 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209 |
| 封裝： | 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209 |
| 文件頁數(shù)： | 24/32頁 |
| 文件大?。?/td> | 766K |
| 代理商： | GS8170DW36AGC-300I |
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GS8170DW36/72AC-350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
24/32
2003, GSI Technology
Tap Controller Instruction Set
ID Register Contents
Overview
There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.
When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.
Die
Revision
Code
Not Used
I/O
Configuration
GSI Technology
JEDEC Vendor
ID Code
P
Bit #
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
0
x72
X
X
X
X
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
1
0
0
0 1 1 0 1 1 0 0 1
1
x36
X
X
X
X
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0 1 1 0 1 1 0 0 1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8170DW36AGC-333 | 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM |
| GS8170S36 | 16Mb（512K x 36Bit）Synchronous SRAM(16M位（512K x 36位）同步靜態(tài)RAM) |
| GS8170S18 | 16Mb（1M x 18Bit）Synchronous SRAM(16M位（1M x 18位）同步靜態(tài)RAM) |
| GS8170S72 | 16Mb（256K x 72Bit）Synchronous SRAM(16M位（256K x 72位）同步靜態(tài)RAM) |
| GS8180D09 | 2Mb x 9Bit Separate I/O Sigma DDR SRAM(2M x 9位獨立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8170DW36AGC-350 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.7NS 209FBGA - Trays |
| GS8170DW36AGC-350I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.7NS 209FBGA - Trays |
| GS8170DW36C-250 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 2.1NS 209FBGA - Trays |
| GS8170DW36C-250I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 2.1NS 209FBGA - Trays |
| GS8170DW72AC-250 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 2.1NS 209FBGA - Trays |
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