參數(shù)資料
型號: GS8170DW36AGC-250I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
中文描述: 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209
文件頁數(shù): 16/32頁
文件大?。?/td> 766K
代理商: GS8170DW36AGC-250I
GS8170DW36/72AC-350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
16/32
2003, GSI Technology
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 1.8 V)
Note:
This parameter is sample tested.
AC Test Conditions
AC Test Load Diagram
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
C
IN
V
IN
= 0 V
4
5
pF
Output Capacitance
C
OUT
V
OUT
= 0 V
6
7
pF
Parameter
Conditions
Input high level
V
DDQ
Input low level
0 V
Max. input slew rate
2 V/ns
Input reference level
V
DDQ
/2
Output reference level
V
DDQ
/2
20% tKC
V
SS
– 1.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 1.0 V
50%
V
DD
V
IL
DQ
VT = V
DDQ
/2
50
RQ = 250
(HSTL I/O)
相關PDF資料
PDF描述
GS8170DW36AGC-300 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36AGC-300I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36AGC-333 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
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GS8170DW36AGC-300 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.8NS 209FBGA - Trays
GS8170DW36AGC-300I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.8NS 209FBGA - Trays
GS8170DW36AGC-350 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.7NS 209FBGA - Trays
GS8170DW36AGC-350I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.7NS 209FBGA - Trays
GS8170DW36C-250 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 2.1NS 209FBGA - Trays