參數(shù)資料
型號: GS8170DW36AGC-250
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
中文描述: 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209
文件頁數(shù): 12/32頁
文件大?。?/td> 766K
代理商: GS8170DW36AGC-250
GS8170DW36/72AC-350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
12/32
2003, GSI Technology
.
CMOS Output Driver Impedance Control
CMOS I/O SigmaRAMs are supplied with selectable (high or low) impedance output drivers. The ZQ pin allows selection between
SRAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive strength (ZQ high) point-to-point
applications.
Pipelined Read Bank Switch with E1 Deselect
Note: E1\ does not deselect the Echo Clock Outputs. Echo Clock outputs are synchronously deselected by E2 or E3 being sampled false.
QD
QC
CQ
Bank 1
CQ1 + CQ2
CQ
Bank 2
DQ
Bank 2
QA
Address
A
XX
ADV
/E
1
/E2 Bank 1
E2 Bank 2
DQ
Bank 1
F
D
E
C
Read
Read
Read
CK
Read
No Op
相關(guān)PDF資料
PDF描述
GS8170DW36AGC-250I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36AGC-300 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36AGC-300I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36AGC-333 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170S36 16Mb(512K x 36Bit)Synchronous SRAM(16M位(512K x 36位)同步靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8170DW36AGC-250I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 2.1NS 209FBGA - Trays
GS8170DW36AGC-300 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.8NS 209FBGA - Trays
GS8170DW36AGC-300I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.8NS 209FBGA - Trays
GS8170DW36AGC-350 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.7NS 209FBGA - Trays
GS8170DW36AGC-350I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.7NS 209FBGA - Trays