參數(shù)資料
型號: GS8170DD36C-333
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
中文描述: 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 11/29頁
文件大?。?/td> 537K
代理商: GS8170DD36C-333
GS8170DD36C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.03 1/2005
11/29
2002, GSI Technology, Inc.
CMOS Output Driver Impedance Control
CMOS I/O SigmaRAMs are supplied with selectable (high or low) impedance output drivers. The ZQ pin allows selection between
SRAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive strength (ZQ high) point-to-point
applications.
SigmaRAM DDR Bank Switch with E1 Deselect
QA0
QA1
QC0
QC1
QD0
QD1
Note: E1\ does not deselect the Echo Clock Outputs. Echo Clock outputs are synchronously deselected by E2 or E3 being sampled false.
F
/E2 Bank 1
E2 Bank 2
DQ
Bank 1
/E
1
C
ADV
Read
D
Read
DQ
Bank 2
CQ
Bank 1
CQ1 + CQ2
Read
CQ
Bank 2
CK
E
Read
No Op
Address
A
XX
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