參數(shù)資料
型號(hào)： GS816236BGB-200I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
中文描述： 512K X 36 CACHE SRAM, 6.5 ns, PBGA119
封裝： ROHS COMPLIANT, FBGA-119
文件頁(yè)數(shù)： 13/37頁(yè)
文件大?。?/td> 866K
代理商： GS816236BGB-200I
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5
–
0.5 to V
DD
+0.5
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS816218/36B(B/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 9/2005
13/37
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
2.
相關(guān)PDF資料
PDF描述
GS816236BGB-250 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816236BGB-250I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816236BGD-150 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816236BGD-150I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816236BGD-200 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816236BGB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 6.5NS/3NS 119FBGA - Trays
GS816236BGB-200V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 6.5NS/3NS 119FBGA - Trays
GS816236BGB-250 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 5.5NS/2.5NS 119FBGA - Trays
GS816236BGB-250I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 5.5NS/2.5NS 119FBGA - Trays
GS816236BGB-250IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 5.5NS/3NS 119FBGA - Trays
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