參數(shù)資料
型號: GS816218BGB-150
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
中文描述: 1M X 18 CACHE SRAM, 7.5 ns, PBGA119
封裝: ROHS COMPLIANT, FBGA-119
文件頁數(shù): 11/37頁
文件大小: 866K
代理商: GS816218BGB-150
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
GS816218/36B(B/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 9/2005
11/37
2004, GSI Technology
Simplified State Diagram
相關(guān)PDF資料
PDF描述
GS816218BGB-150I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BGB-200 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BGB-200I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BGB-250 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BGB-250I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816218BGB-150I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays
GS816218BGB-150IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays
GS816218BGB-150V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays
GS816218BGB-200 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 1MX18 6.5NS/3NS 119FBGA - Trays
GS816218BGB-200I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 119FBGA - Trays