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參數(shù)資料
| 型號： | GS78116B-15T |
| 英文描述： | x16 SRAM |
| 中文描述： | x16的SRAM |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 369K |
| 代理商： | GS78116B-15T |
Rev: 1.02 9/2001
For latest documentation see http://www.gsitechnology.com.
7/11
1999, Giga Semiconductor, Inc.
GS78116B
* These parameters are sampled and are not 100% tested.
Write Cycle 1: WE Controlled
Write Cycle
Parameter
Symbol
-10
-12
-15
Unit
Min
Max
Min
Max
Min
Max
Write cycle time
tWC
10
—
12
—
15
—
ns
Address valid to end of write
tAW
7
—
8
—
10
—
ns
Chip enable to end of write
tCW
7
—
8
—
10
—
ns
Data set up time
tDW
5
—
6
—
7
—
ns
Data hold time
tDH
0
—
0
—
0
—
ns
Write pulse width
tWP
7
—
8
—
10
—
ns
Address set up time
tAS
0
—
0
—
0
—
ns
Write recovery time (WE)
tWR
0
—
0
—
0
—
ns
Write recovery time (CE)
tWR1
0
—
0
—
0
—
ns
Output Low Z from end of write
tWLZ
*
3
—
3
—
3
—
ns
Write to output in High Z
tWHZ
*
—
4
—
5
—
6
ns
t
WC
Address
CE
WE
Data In
OE
Data Out
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WLZ
t
WHZ
Data valid
High impedance
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