參數(shù)資料
型號: GS71024
廠商: GSI TECHNOLOGY
英文描述: 1.5Mb(64K x 24Bit)Asynchronous SRAM(1.5M位(64K x 24位)異步靜態(tài)RAM)
中文描述: 即:1.5MB(64K的x 24位)異步SRAM(150萬位(64K的× 24位)異步靜態(tài)RAM)的
文件頁數(shù): 5/13頁
文件大?。?/td> 260K
代理商: GS71024
Rev: 1.03 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
5/13
1999, Giga Semiconductor, Inc.
GS71024T/U
AC Test Conditions
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70°C
-40 to 85°C
8 ns
10 ns
12 ns
15 ns
10 ns
12 ns
15 ns
Operating
Supply
Current
I
DD
CE
V
IL
All other inputs
V
IH
or
V
IL
Min. cycle time
I
OUT
= 0 mA
190 mA
160 mA
130 mA
110 mA
165 mA
135 mA
115 mA
Standby
Current
I
SB1
CE
V
IH
All other inputs
V
IH
or
V
IL
Min. cycle time
45 mA
40 mA
35 mA
30 mA
45 mA
40 mA
35 mA
Standby
Current
I
SB2
CE
V
DD
– 0.2 V
All other inputs
V
DD
– 0.2 V or
0.2 V
10 mA
15 mA
DQ
VT = 1.4 V
50
30pF
1
DQ
3.3 V
Output Load 1
Output Load 2
589
434
5pF
1
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted
Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
.
3.
Parameter
Conditions
Input high level
V
IH
= 2.4 V
Input low level
V
IL
= 0.4 V
Input rise time
tr = 1 V/ns
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output reference level
1.4 V
Output load
Fig. 1& 2
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GS71108AJ-10IT x8 SRAM
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