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SILICON TRANSISTOR
GN4xxx
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
DATA SHEET
Document No. D16490EJ2V0DS00 (2nd edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2002
The mark
#
shows major revised points.
FEATURES
Compact package
Resistors built-in type
Complementary to GA4xxx
ORDERING INFORMATION
PART NUMBER
PACKAGE
GN4xxx
SC-70
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
V
CBO
60
V
Collector to Emitter Voltage
V
CEO
50
V
Emitter to Base Voltage
V
EBO
5
V
Collector Current (DC)
I
C
0.1
A
Collector Current (pulse)
Note
I
C(pulse)
0.2
A
Total Power Dissipation
P
T
0.15
W
Junction Temperature
T
j
150
°C
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
T
stg
55 to +150
°C
PART NUMBER
MARK
R
1
R
2
UNIT
PART NUMBER
MARK
R
1
R
2
UNIT
GN4A4M
NA1
10.0
10.0
k
GN4L4L
NK1
47.0
22.0
k
GN4F4M
NB1
22.0
22.0
k
GN4A4Z
NL1
10.0
k
GN4L4M
NC1
47.0
47.0
k
GN4F4Z
NM1
22.0
k
GN4L3M
ND1
4.7
4.7
k
GN4L4Z
NN1
47.0
k
GN4L3N
NE1
4.7
10.0
k
GN4F3M
NP1
2.2
2.2
k
GN4L3Z
NF1
4.7
k
GN4F3P
NQ1
2.2
10.0
k
GN4A3Q
NG1
1.0
10.0
GN4F3R
NR1
2.2
47.0
k
GN4A4P
NH1
10.0
47.0
k
GN4A4L
NS1
10.0
4.7
k
GN4F4N
NJ1
22.0
47.0
k
GN4L4K
NT1
47.0
10.0
k
PACKAGE DRAWING (Unit: mm)
2
±
0
1
±
0
3
2
1
2.0
±
0.2
0.65
0.3
+
0.1
0
0.65
0.3
+
0.1
0
0.3
0.9
±
0.1
0.15
+
0.1
0 to 0.1
Marking
EQUIVALENT CIRCUIT
2
R
1
R
2
1
3
#
PIN CONNECTION
1: Emitter
2: Base
3: Collector
#
#